Title:
CLEANING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2017/199570
Kind Code:
A1
Abstract:
A cleaning method according to the present invention comprises (a) a step for preparing a process chamber after performing a process for forming an oxide film on a substrate, said oxide film containing at least one of carbon and nitrogen, and (b) a step for removing a deposit, which adheres to the inside of the process chamber and contains at least one of carbon and nitrogen, by supplying a hydrogen fluoride gas into the process chamber. The step (b) is carried out under such conditions where the etching rate of the deposit adhering to the inside of the process chamber is higher than the etching rate of a quartz member that is present within the process chamber.
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Inventors:
SONE SHIN (JP)
NAGATO MASAYA (JP)
KAMEDA KENJI (JP)
KONNO KOTARO (JP)
NAGATO MASAYA (JP)
KAMEDA KENJI (JP)
KONNO KOTARO (JP)
Application Number:
PCT/JP2017/011122
Publication Date:
November 23, 2017
Filing Date:
March 21, 2017
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
H01L21/31; C23C16/40; C23C16/44; H01L21/3065
Foreign References:
| JP2015185565A | 2015-10-22 | |||
| JP2016012701A | 2016-01-21 | |||
| JP2012060036A | 2012-03-22 | |||
| JP2004031637A | 2004-01-29 |
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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