Title:
CLEANING METHOD FOR PLASMA ETCHING CHAMBER, AND APPLICATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/040757
Kind Code:
A1
Abstract:
A cleaning method for a plasma etching chamber, comprising the following steps: A) placing a cleaning sheet (1) in a plasma etching chamber after completed sample processing, and introducing an inert gas for capacitively coupled plasma (CCP) cleaning; B) and then introducing a chemical cleaning gas for inductively coupled plasma (ICP) cleaning, the chemical cleaning gas comprising one or more of CH2F2, CF4, NF3, SF6, and O2. The CCP Faraday physical cleaning is performed in the plasma etching chamber, and then the ICP chemical cleaning is performed, which not only has a good cleaning effect on both a chamber wall and a window of the plasma etching chamber, but also improves the cleaning capability of multiple metal contaminations by means of different combinations of gases.
Inventors:
LIANG FENG (CN)
YANG YUXIN (CN)
LI XUEDONG (CN)
LIU XIAOBO (CN)
LI JIAHE (CN)
PENG TAIYAN (CN)
XU KAIDONG (CN)
YANG YUXIN (CN)
LI XUEDONG (CN)
LIU XIAOBO (CN)
LI JIAHE (CN)
PENG TAIYAN (CN)
XU KAIDONG (CN)
Application Number:
PCT/CN2022/118025
Publication Date:
March 23, 2023
Filing Date:
September 09, 2022
Export Citation:
Assignee:
JIANGSU LEUVEN INSTR CO LTD (CN)
International Classes:
B08B7/00; H05H1/24
Foreign References:
| CN107316797A | 2017-11-03 | |||
| CN101497982A | 2009-08-05 | |||
| CN109985861A | 2019-07-09 | |||
| CN107452591A | 2017-12-08 | |||
| US20170069472A1 | 2017-03-09 | |||
| CN105097604A | 2015-11-25 | |||
| US20080014747A1 | 2008-01-17 | |||
| CN207082507U | 2018-03-09 | |||
| CN202111092346A | 2021-09-17 |
Attorney, Agent or Firm:
UNITALEN ATTORNEYS AT LAW CO., LTD. (CN)
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