Title:
CLEANING METHOD AND PLASMA TREATMENT METHOD
Document Type and Number:
WIPO Patent Application WO/2016/181893
Kind Code:
A1
Abstract:
Provided is a method for cleaning a substrate treatment device that etches films containing metal, wherein the cleaning method has: a first cleaning step for removing carbon-containing deposits using a plasma generated from a gas that includes a hydrogen-containing gas; a second cleaning step following the first cleaning step, for removing metal-containing deposits using a plasma generated from an inert gas; and a third cleaning step following the second cleaning step, for removing silicon-containing deposits using a plasma generated from a gas that includes a fluorine-containing gas and an oxygen-containing gas.
Inventors:
KUBO TAKUYA (JP)
KANG SONG YUN (JP)
SHIMODA KEIICHI (US)
OHISHI TETSUYA (JP)
KANG SONG YUN (JP)
SHIMODA KEIICHI (US)
OHISHI TETSUYA (JP)
Application Number:
PCT/JP2016/063605
Publication Date:
November 17, 2016
Filing Date:
May 02, 2016
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; B08B7/00; G11B5/84; H01L21/304
Domestic Patent References:
| WO2008035678A1 | 2008-03-27 |
Foreign References:
| JP2015008211A | 2015-01-15 | |||
| JP2015018876A | 2015-01-29 | |||
| JP2003309105A | 2003-10-31 | |||
| JP2015032659A | 2015-02-16 | |||
| JP2010050310A | 2010-03-04 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
Tadashige Ito (JP)
Tadashige Ito (JP)
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