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Title:
CLEANING SOLUTION COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2018/181901
Kind Code:
A1
Abstract:
Provided is a cleaning solution composition which: does not damage SiO2, Si3N4, Si, etc., forming a layer on the substrate surface, when cleaning a surface of a semiconductor substrate or a glass substrate; can be used under processing conditions applicable to a brush scrub cleaning chamber attached to a CMP device; and exhibits high removal of compounds derived from polishing particles in a slurry. This cleaning solution composition is a cleaning solution composition for cleaning a surface of a semiconductor substrate or a glass substrate, contains water and one or two or more inorganic acids (excluding hydrofluoric acid) or salts thereof containing a fluorine atom in the structure thereof, and has a hydrogen ion concentration (pH) of less than 7.

Inventors:
TANIGUCHI YUMIKO (JP)
OHWADA TAKUO (JP)
Application Number:
PCT/JP2018/013615
Publication Date:
October 04, 2018
Filing Date:
March 30, 2018
Export Citation:
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Assignee:
KANTO KAGAKU (JP)
International Classes:
C11D7/08; C11D1/22; C11D3/04; C11D3/39; C11D7/18; C11D17/08; G11B5/84; H01L21/304
Domestic Patent References:
WO2017208749A12017-12-07
Foreign References:
JP2006310603A2006-11-09
JPH09246223A1997-09-19
JPH10125642A1998-05-15
JP2010515246A2010-05-06
JP2009542849A2009-12-03
JP2013243376A2013-12-05
JP2012502142A2012-01-26
JP2004325918A2004-11-18
JP2008107494A2008-05-08
JP2011516620A2011-05-26
JP2017502129A2017-01-19
JP2006080501A2006-03-23
JP2007053388A2007-03-01
JP2009099945A2009-05-07
JP2016037569A2016-03-22
JP2012164713A2012-08-30
JP2012079365A2012-04-19
Attorney, Agent or Firm:
KUZUWA, Kiyoshi (JP)
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