Title:
CLEANING SOLUTION AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2021/230063
Kind Code:
A1
Abstract:
The present invention provides: a cleaning solution which is for a semiconductor substrate subjected to CMP and has excellent selectivity of RuO2 removing performance; and a method for cleaning a semiconductor substrate subjected to CMP. A cleaning solution according to the present invention is for a semiconductor substrate subjected to a chemical mechanical polishing treatment, and contains perhalogen acid and halogen acid.
Inventors:
KAMIMURA TETSUYA (JP)
Application Number:
PCT/JP2021/016639
Publication Date:
November 18, 2021
Filing Date:
April 26, 2021
Export Citation:
Assignee:
FUJIFILM ELECTRONIC MAT CO LTD (JP)
International Classes:
C11D17/08; C11D1/83; C11D3/04; C11D3/20; C11D3/26; C11D3/28; C11D3/36; C11D3/37; C11D3/39; C11D7/08; C11D7/22; C11D7/26; C11D7/32; C11D7/36; C11D7/38; H01L21/304
Domestic Patent References:
| WO2019138814A1 | 2019-07-18 |
Foreign References:
| JP2014093407A | 2014-05-19 |
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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