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Title:
CLEANING SOLUTION FOR REMOVING DRY ETCHING RESIDUE AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE USING SAME
Document Type and Number:
WIPO Patent Application WO/2019/176652
Kind Code:
A1
Abstract:
The present invention can provide a cleaning solution containing 0.2-20 mass% of an amine compound (A), 40-70 mass% of a water-soluble organic solvent (B), and water, wherein the amine compound (A) contains at least one selected from the group consisting of n-butylamine, hexylamine, octylamine, 1,4-butanediamine, dibutylamine, 3-amino-1-propanol, N,N-diethyl-1,3-diaminopropane, and bis(hexamethylene)triamine, and the water-soluble organic solvent (B) has a viscosity of 10 mPa·s or less at 20°C and a pH of 9.0-14.

Inventors:
KIKUNAGA Takahiro (Inc. Tokyo Techno Park, 1-1, Niijuku 6-chome, Katsushika-k, Tokyo 01, 〒1258601, JP)
HORIE Hiroaki (Inc. Tokyo Techno Park, 1-1, Niijuku 6-chome, Katsushika-k, Tokyo 01, 〒1258601, JP)
AOYAMA Kimihiro (Inc. Tokyo Techno Park, 1-1, Niijuku 6-chome, Katsushika-k, Tokyo 01, 〒1258601, JP)
TAJIMA Nobuo (Inc. Tokyo Techno Park, 1-1, Niijuku 6-chome, Katsushika-k, Tokyo 01, 〒1258601, JP)
Application Number:
JP2019/008639
Publication Date:
September 19, 2019
Filing Date:
March 05, 2019
Export Citation:
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Assignee:
MITSUBISHI GAS CHEMICAL COMPANY, INC. (5-2 Marunouchi 2-chome, Chiyoda-ku Tokyo, 24, 〒1008324, JP)
International Classes:
H01L21/304; C11D7/26; C11D7/32; C11D7/50; C11D17/08; H01L21/28; H01L21/3213; H01L21/768
Attorney, Agent or Firm:
KOBAYASHI Hiroshi et al. (ABE IKUBO & KATAYAMA, Fukuoka Bldg. 9th Fl. 8-7, Yaesu 2-chome, Chuo-k, Tokyo 28, 〒1040028, JP)
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