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Title:
CLEANING SOLUTION FOR REMOVING DRY ETCHING RESIDUE AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE USING SAME
Document Type and Number:
WIPO Patent Application WO/2019/176652
Kind Code:
A1
Abstract:
The present invention can provide a cleaning solution containing 0.2-20 mass% of an amine compound (A), 40-70 mass% of a water-soluble organic solvent (B), and water, wherein the amine compound (A) contains at least one selected from the group consisting of n-butylamine, hexylamine, octylamine, 1,4-butanediamine, dibutylamine, 3-amino-1-propanol, N,N-diethyl-1,3-diaminopropane, and bis(hexamethylene)triamine, and the water-soluble organic solvent (B) has a viscosity of 10 mPa·s or less at 20°C and a pH of 9.0-14.

Inventors:
KIKUNAGA TAKAHIRO (JP)
HORIE HIROAKI (JP)
AOYAMA KIMIHIRO (JP)
TAJIMA NOBUO (JP)
Application Number:
JP2019/008639
Publication Date:
September 19, 2019
Filing Date:
March 05, 2019
Export Citation:
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Assignee:
MITSUBISHI GAS CHEMICAL CO (JP)
International Classes:
H01L21/304; C11D7/26; C11D7/32; C11D7/50; C11D17/08; H01L21/28; H01L21/3213; H01L21/768
Domestic Patent References:
WO2017208767A12017-12-07
WO2017119350A12017-07-13
WO2016076033A12016-05-19
WO2017119350A12017-07-13
WO2016076033A12016-05-19
Foreign References:
JP2016127291A2016-07-11
JPH05287300A1993-11-02
JP2013157516A2013-08-15
JP2011159658A2011-08-18
Attorney, Agent or Firm:
KOBAYASHI Hiroshi et al. (JP)
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