Title:
CMOS IMAGE SENSOR
Document Type and Number:
WIPO Patent Application WO/2018/165832
Kind Code:
A1
Abstract:
A CMOS image sensor includes: a PD, an anode of which is connected to a ground, and a cathode of which is connected to a source of a TG; an FD; a Ca; the TG, the source of which is connected to the cathode of the PD, and a drain of which is connected to the FD; an SW, a source of which is connected to a power source voltage, and a drain of which is connected to a source of an RS and the Ca; the RS, the source of which is connected to the drain of the SW and the Ca, and a drain of which is connected to the FD; an AMP, a gate of which is connected to the FD, a source of which is connected to the power source voltage, wherein the PD is arranged in a first row on a substrate, any of the AMP, SW, and RS is arranged in a second row on the substrate, and the rest of the AMP, SW, and RS are arranged in a third row on the substrate. The CMOS image sensor achieves to shrink the pixel size of a high dynamic range pixel.
Inventors:
MONOI MAKOTO (JP)
Application Number:
PCT/CN2017/076510
Publication Date:
September 20, 2018
Filing Date:
March 13, 2017
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H04N5/335
Foreign References:
| CN102265605A | 2011-11-30 | |||
| CN101729805A | 2010-06-09 | |||
| CN101444085A | 2009-05-27 | |||
| CN101753866A | 2010-06-23 | |||
| US20120175499A1 | 2012-07-12 | |||
| US20060203114A1 | 2006-09-14 |
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