Title:
CMP POLISHING FLUID FOR POLISHING PALLADIUM AND POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2011/077887
Kind Code:
A1
Abstract:
The disclosed CMP polishing fluid for polishing palladium contains 1,2,4-triazole, phosphoric acids, an oxidizing agent, and abrasive particles having a degree of association of at least 1.5 to less than 2.5. The disclosed polishing method is a method for polishing a substrate and involves polishing the substrate with a polishing cloth while supplying a CMP polishing fluid between the substrate and the polishing cloth. The substrate has a palladium layer on the surface facing the polishing cloth, and the CMP polishing fluid is a CMP polishing fluid for polishing palladium and contains 1,2,4-triazole, phosphoric acids, an oxidizing agent, and abrasive particles having a degree of association of at least 1.5 to less than 2.5.
Inventors:
MINAMI HISATAKA (JP)
OKADA YUUHEI (JP)
OKADA YUUHEI (JP)
Application Number:
PCT/JP2010/070929
Publication Date:
June 30, 2011
Filing Date:
November 24, 2010
Export Citation:
Assignee:
HITACHI CHEMICAL CO LTD (JP)
MINAMI HISATAKA (JP)
OKADA YUUHEI (JP)
MINAMI HISATAKA (JP)
OKADA YUUHEI (JP)
International Classes:
H01L21/304; B24B37/00; C09K3/14
Domestic Patent References:
| WO2009151120A1 | 2009-12-17 |
Foreign References:
| JP2008034818A | 2008-02-14 | |||
| JP2006049709A | 2006-02-16 | |||
| JP2004172338A | 2004-06-17 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
Yoshiki Hasegawa (JP)
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