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Patent Searching and Data


Title:
CMP POLISHING LIQUID AND POLISHING METHOD IN WHICH SAME IS USED
Document Type and Number:
WIPO Patent Application WO/2016/140246
Kind Code:
A1
Abstract:
A CMP polishing liquid for polishing a ruthenium-based metal, wherein: the CMP polishing liquid contains abrasive grains, a metal oxidant, and water; the metal oxidant has an oxidation-reduction potential accompanied by exchange of hydroxide ions; the oxidation-reduction potential being 0.68V or above in relation to the standard hydrogen electrode; the pH of the CMP polishing liquid is 7.0-13.0; and the abrasive grain content is at least 0.10 mass parts to 100 mass parts of the total of the abrasive grain content and the water content.

Inventors:
KURIHARA YOSHIAKI (JP)
SAKAI MASANORI (JP)
Application Number:
PCT/JP2016/056371
Publication Date:
September 09, 2016
Filing Date:
March 02, 2016
Export Citation:
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Assignee:
HITACHI CHEMICAL CO LTD (JP)
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Foreign References:
JP2009010031A2009-01-15
JP2014069260A2014-04-21
JPS5970783A1984-04-21
JP2003136406A2003-05-14
JP2015029001A2015-02-12
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
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