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Title:
CMP POLISHING LIQUID, METHOD FOR POLISHING SUBSTRATE, AND ELECTRONIC COMPONENT
Document Type and Number:
WIPO Patent Application WO/2011/071168
Kind Code:
A1
Abstract:
Disclosed is a CMP polishing liquid which is composed of a first liquid and a second liquid that are mixed together when used. The first liquid contains cerium abrasive grains, a dispersant and water. The second liquid contains a polyacrylic acid compound, a surfactant, a pH adjusting agent, a phosphoric acid compound and water, and has a pH of not less than 6.5. The first liquid and the second liquid that are mixed together so that the content of the phosphoric acid compound in the resulting CMP polishing liquid is within a specific range. Also disclosed is a CMP polishing liquid which contains cerium abrasive grains, a dispersant, a polyacrylic acid compound, a surfactant, a pH adjusting agent, a phosphoric acid compound and water, and has a phosphoric acid compound content within a specific range.

Inventors:
SHINODA TAKASHI (JP)
ENOMOTO KAZUHIRO (JP)
AKUTSU TOSHIAKI (JP)
Application Number:
PCT/JP2010/072291
Publication Date:
June 16, 2011
Filing Date:
December 10, 2010
Export Citation:
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Assignee:
HITACHI CHEMICAL CO LTD (JP)
SHINODA TAKASHI (JP)
ENOMOTO KAZUHIRO (JP)
AKUTSU TOSHIAKI (JP)
International Classes:
H01L21/304; B24B37/00; C09K3/14
Foreign References:
JP2006229215A2006-08-31
JP2007535118A2007-11-29
JP2005518090A2005-06-16
JP2009212378A2009-09-17
JP2001007060A2001-01-12
JP2009212473A2009-09-17
JP2009094430A2009-04-30
JP2009504551A2009-02-05
JP2004066027A2004-03-04
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
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