Title:
CMP POLISHING SOLUTION, PREPARATION METHOD THEREFOR AND APPLICATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2019/119816
Kind Code:
A1
Abstract:
A CMP polishing solution for polishing a GaAs wafer and a preparation method therefor. The CMP polishing solution comprises the following components in parts by weight: 0.1-50 parts of abrasive, 0.001-0.4 part of surfactant, 0.001-0.6 part of film-forming agent, 0.05-10 parts of pH regulator, 0.01-4 parts of polishing accelerant, and the balance of deionized water. The pH of the polishing solution ranges from 9.5 to 12.5. The polishing solution can be continuously recycled for 6-10 h. Moreover, the steps and operations of the preparation method are simple.
Inventors:
WANG LEJUN (CN)
LI LINLIN (CN)
SONG SHIJIA (CN)
LIU GUIYONG (CN)
PENG DONGYANG (CN)
JIANG HONG (CN)
LI LINLIN (CN)
SONG SHIJIA (CN)
LIU GUIYONG (CN)
PENG DONGYANG (CN)
JIANG HONG (CN)
Application Number:
PCT/CN2018/098320
Publication Date:
June 27, 2019
Filing Date:
August 02, 2018
Export Citation:
Assignee:
BEIJING CHUANGYU TECH CO LTD (CN)
International Classes:
B24B29/02; C09G1/02; B24B57/00; H01L21/02; H01L21/304
Domestic Patent References:
| WO2017142885A1 | 2017-08-24 |
Foreign References:
| CN108017998A | 2018-05-11 | |||
| CN108034360A | 2018-05-15 | |||
| CN101475778A | 2009-07-08 | |||
| CN106833389A | 2017-06-13 | |||
| CN101747841A | 2010-06-23 | |||
| CN101081966A | 2007-12-05 | |||
| US20170275498A1 | 2017-09-28 |
Attorney, Agent or Firm:
CN-KNOWHOW INTELLECTUAL PROPERTY AGENT LIMITED (CN)
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