Title:
CMP SLURRY COMPOSITION FOR POLISHING POLYCRYSTALLINE SILICON AND POLISHING METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2020/138717
Kind Code:
A1
Abstract:
The present invention relates to a CMP slurry composition for polishing polycrystalline silicon and a polishing method using same. A CMP slurry composition for polishing polycrystalline silicon according to an embodiment of the present invention comprises: polishing particles; a surface roughness reducing agent; a polish regulator containing an organic acid; and a pH regulator.
Inventors:
LEE JAE WOO (KR)
KIM JI HYE (KR)
CHOI BO HYEOK (KR)
KIM JI HYE (KR)
CHOI BO HYEOK (KR)
Application Number:
PCT/KR2019/015718
Publication Date:
July 02, 2020
Filing Date:
November 18, 2019
Export Citation:
Assignee:
KCTECH CO LTD (KR)
International Classes:
C09G1/02; C09K3/14; H01L21/3105
Foreign References:
| KR20030042147A | 2003-05-28 | |||
| KR20140085253A | 2014-07-07 | |||
| KR20170105515A | 2017-09-19 | |||
| KR20180078653A | 2018-07-10 | |||
| US20150102012A1 | 2015-04-16 |
Attorney, Agent or Firm:
MUHANN PATENT & LAW FIRM (KR)
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