COATING LIQUID FOR FORMING OXIDE OR OXYNITRIDE INSULATOR FILM, OXIDE OR OXYNITRIDE INSULATOR FILM, FIELD EFFECT TRANSISTOR, AND METHODS FOR MANUFACTURING THESE

WIPO Patent Application WO/2018/101278

A1

Provided is a coating liquid for forming an oxide or oxynitride insulator film, the coating liquid containing: element A; at least one of element B and element C; and a solvent, wherein the element A is at least one selected from the group consisting of Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the element B is at least one selected from the group consisting of Ga, Ti, Zr, and Hf, the element C is at least one selected from the group consisting of elements in group 2 of the periodic table, and the solvent contains at least one selected from the group consisting of water and organic solvents having a flash point of not lower than 21°C but lower than 200°C.

UEDA NAOYUKI (JP)
NAKAMURA YUKI (JP)
ABE YUKIKO (JP)
MATSUMOTO SHINJI (JP)
SONE YUJI (JP)
SAOTOME RYOICHI (JP)
ARAE SADANORI (JP)
KUSAYANAGI MINEHIDE (JP)
ANDO YUICHI (JP)

PCT/JP2017/042686

June 07, 2018

November 28, 2017

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RICOH CO LTD (JP)
UEDA NAOYUKI (JP)
NAKAMURA YUKI (JP)
ABE YUKIKO (JP)
MATSUMOTO SHINJI (JP)
SONE YUJI (JP)
SAOTOME RYOICHI (JP)
ARAE SADANORI (JP)
KUSAYANAGI MINEHIDE (JP)
ANDO YUICHI (JP)

H01L21/318; H01L21/336; H01L29/786

JP2011216845A	2011-10-27
JP2007019432A	2007-01-25
JP2016197631A	2016-11-24
JP2011151370A	2011-08-04
JP2016028412A	2016-02-25
JP2015061048A	2015-03-30
JP2002543627A	2002-12-17
JP2001233604A	2001-08-28
JPH10270712A	1998-10-09
JP2008159824A	2008-07-10

CHERIE R. KAGANPAUL ANDRY: "Thin-Film Transistors", 25 February 2003, CRC PRESS
See also references of EP 3550595A4

HIROTA, Koichi (JP)

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