COLUMNAR SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

Title:

COLUMNAR SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2015/132887

Kind Code:

A1

Abstract:

Provided is a columnar semiconductor memory device, which has high density, high reliability, and low cost. Tunnel insulating layers (11aa, 11bb, 11dd), a data charge accumulation insulating layer (12a), an interlayer insulating layer (13a), and gas layers (18a, 18b, 18d) are formed so as to surround the outer circumferences of Si columns (4a, 4b, 4c, 4d). Word lines (14a1, 14a2, 14an) are formed in the direction perpendicular to an upper surface of an i layer substrate (1a) so as to surround the outer circumferences of the gas layers (18a, 18b, 18d), said word lines being separated from each other by means of interlayer insulating layers (15a1, 15a2, 15an).

Inventors:

MASUOKA FUJIO (JP)
HARADA NOZOMU (JP)

Application Number:

PCT/JP2014/055499

Publication Date:

September 11, 2015

Filing Date:

March 04, 2014

Export Citation:

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Assignee:

UNISANTIS ELECT SINGAPORE PTE (SG)
MASUOKA FUJIO (JP)
HARADA NOZOMU (JP)

International Classes:

H01L21/8247; H01L21/336; H01L27/115; H01L29/788; H01L29/792

Foreign References:

JP2013069841A	2013-04-18
JP2010177279A	2010-08-12
JP2011165815A	2011-08-25
JP2009111049A	2009-05-21
JP2012009701A	2012-01-12

Attorney, Agent or Firm:

KIMURA MITSURU (JP)
Mitsuru Kimura (JP)

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