Title:
COMPLEMENTARY RESISTOR SWITCH, CONTACT-CONNECTED POLYCRYSTALLINE PIEZO- OR FERROELECTRIC THIN-FILM LAYER, METHOD FOR ENCRYPTING A BIT SEQUENCE
Document Type and Number:
WIPO Patent Application WO/2014/111481
Kind Code:
A3
Abstract:
Disclosed is a complementary resistor switch (3) comprising two outer contacts, between which two piezo- or ferroelectric layers (11a and 11b) having an inner common contact are situated. At least one region (11', 11") of the layers is modified, either the outer contacts are rectifying (S) and the inner contact is non-rectifying (0), or vice versa, the modified regions are formed at the rectifying contacts, the layers have different strain-dependent structural phases with different band gaps and/or different polarization charges, and the electrical conductivity of the layers is different. Also disclosed are a connectable resistor structure having at least one Schottky contact at two adjoining piezo- or ferroelectric layers, a polycrystalline piezo- or ferroelectric layer comprising modified crystallites, and a method and circuits for encrypting and decrypting a bit sequence.
Inventors:
YOU TIANGUI (DE)
SCHMIDT HEIDEMARIE (DE)
DU NAN (DE)
BÜRGER DANILO (DE)
SKOPURA ILONA (DE)
SHUAI YAO (DE)
OU XON (DE)
SCHMIDT HEIDEMARIE (DE)
DU NAN (DE)
BÜRGER DANILO (DE)
SKOPURA ILONA (DE)
SHUAI YAO (DE)
OU XON (DE)
Application Number:
PCT/EP2014/050829
Publication Date:
September 18, 2014
Filing Date:
January 16, 2014
Export Citation:
Assignee:
HELMHOLTZ ZENTRUM DRESDEN (DE)
International Classes:
H01L27/24; H01L45/00; H01L31/072; H03K19/08; H04L9/00
Domestic Patent References:
| WO2013017131A2 | 2013-02-07 |
Foreign References:
| EP0660412A1 | 1995-06-28 | |||
| US20100135061A1 | 2010-06-03 |
Other References:
LEE D ET AL: "Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects", PHYSICAL REVIEW B, vol. 84, no. 12, 8 September 2011 (2011-09-08), pages 125305/1 - 9, XP055118212, ISSN: 1098-0121, DOI: 10.1103/PhysRevB.84.125305
SHUAI Y ET AL: "Nonvolatile Multilevel Resistive Switching in Ar+ Irradiated BiFeO3 Thin Films", IEEE ELECTRON DEVICE LETTERS, vol. 34, no. 1, 13 December 2012 (2012-12-13), pages 54 - 56, XP011482252, ISSN: 0741-3106, DOI: 10.1109/LED.2012.2227666
LIN Z-H ET AL: "Image encryption based on chaos with PWL memristor in Chua's circuit", INTERNATIONAL CONFERENCE ON COMMUNICATIONS, CIRCUITS AND SYSTEMS (ICCCAS), 23-25 JULY 2009, MILPITAS, CA, USA, 23 July 2009 (2009-07-23), pages 964 - 968, XP031528763, ISBN: 978-1-4244-4886-9, DOI: 10.1109/ICCCAS.2009.5250354
DRISCOLL T ET AL: "Chaotic memristor", APPLIED PHYSICS A, vol. 102, no. 4, 5 February 2011 (2011-02-05), pages 885 - 889, XP019890026, ISSN: 1432-0630, DOI: 10.1007/S00339-011-6318-Z
ROSE G S ET AL: "Hardware security strategies exploiting nanoelectronic circuits", 18TH ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE (ASP-DAC 2013), 22-25 JANUARY 2013, YOKOHAMA, JAPAN, 22 January 2013 (2013-01-22), pages 368 - 372, XP032385838, ISBN: 978-1-4673-3029-9, DOI: 10.1109/ASPDAC.2013.6509623
YAO Y P ET AL: "Multi-state resistive switching memory with secure information storage in Au/BiFe0.95Mn0.05O3/La5/8Ca3/8MnO3 heterostructure", APPLIED PHYSICS LETTERS, vol. 100, no. 19, 7 May 2012 (2012-05-07), pages 193504/1 - 4, XP012155987, ISSN: 0003-6951, DOI: 10.1063/1.4714514
DU N ET AL: "Novel implementation of memristive systems for data encryption and obfuscation", JOURNAL OF APPLIED PHYSICS, vol. 115, no. 12, 25 March 2014 (2014-03-25), pages 124501/1 - 7, XP012183617, ISSN: 0021-8979, [retrieved on 19010101], DOI: 10.1063/1.4869262
SHUAI Y ET AL: "Nonvolatile Multilevel Resistive Switching in Ar+ Irradiated BiFeO3 Thin Films", IEEE ELECTRON DEVICE LETTERS, vol. 34, no. 1, 13 December 2012 (2012-12-13), pages 54 - 56, XP011482252, ISSN: 0741-3106, DOI: 10.1109/LED.2012.2227666
LIN Z-H ET AL: "Image encryption based on chaos with PWL memristor in Chua's circuit", INTERNATIONAL CONFERENCE ON COMMUNICATIONS, CIRCUITS AND SYSTEMS (ICCCAS), 23-25 JULY 2009, MILPITAS, CA, USA, 23 July 2009 (2009-07-23), pages 964 - 968, XP031528763, ISBN: 978-1-4244-4886-9, DOI: 10.1109/ICCCAS.2009.5250354
DRISCOLL T ET AL: "Chaotic memristor", APPLIED PHYSICS A, vol. 102, no. 4, 5 February 2011 (2011-02-05), pages 885 - 889, XP019890026, ISSN: 1432-0630, DOI: 10.1007/S00339-011-6318-Z
ROSE G S ET AL: "Hardware security strategies exploiting nanoelectronic circuits", 18TH ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE (ASP-DAC 2013), 22-25 JANUARY 2013, YOKOHAMA, JAPAN, 22 January 2013 (2013-01-22), pages 368 - 372, XP032385838, ISBN: 978-1-4673-3029-9, DOI: 10.1109/ASPDAC.2013.6509623
YAO Y P ET AL: "Multi-state resistive switching memory with secure information storage in Au/BiFe0.95Mn0.05O3/La5/8Ca3/8MnO3 heterostructure", APPLIED PHYSICS LETTERS, vol. 100, no. 19, 7 May 2012 (2012-05-07), pages 193504/1 - 4, XP012155987, ISSN: 0003-6951, DOI: 10.1063/1.4714514
DU N ET AL: "Novel implementation of memristive systems for data encryption and obfuscation", JOURNAL OF APPLIED PHYSICS, vol. 115, no. 12, 25 March 2014 (2014-03-25), pages 124501/1 - 7, XP012183617, ISSN: 0021-8979, [retrieved on 19010101], DOI: 10.1063/1.4869262
Attorney, Agent or Firm:
VIERING, JENTSCHURA & PARTNER (München, DE)
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