Title:
COMPONENT FOR FABRICATING SIC SEMICONDUCTOR, HAVING PLURALITY OF LAYERS HAVING DIFFERENT TRANSMITTANCES, AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2018/034531
Kind Code:
A1
Abstract:
Provided according to an embodiment of the present invention is a component for fabricating an SiC semiconductor, having a plurality of layers having different transmittances, the component comprising two or more superposed layers, wherein each of the superposed layers contains SiC and has a transmittance value different from that of another adjacent layer.
Inventors:
KIM JOUNG IL (KR)
Application Number:
PCT/KR2017/009001
Publication Date:
February 22, 2018
Filing Date:
August 18, 2017
Export Citation:
Assignee:
TOKAI CARBON KOREA CO LTD (KR)
International Classes:
H01L29/24; H01L21/02; H01L21/205; H01L21/3065; H01L21/3213
Foreign References:
| KR101631797B1 | 2016-06-20 | |||
| KR20160071580A | 2016-06-22 | |||
| KR20130094802A | 2013-08-26 | |||
| KR20100133910A | 2010-12-22 | |||
| KR20150123078A | 2015-11-03 |
Attorney, Agent or Firm:
MUHANN PATENT & LAW FIRM (KR)
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