Title:
COMPONENT INCLUDING SILICON CARBIDE LAYER, AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2021/157953
Kind Code:
A1
Abstract:
The present invention relates to a component including a silicon carbide layer, and a method for manufacturing same. A manufacturing method according to the present invention comprises the steps of: preparing a graphite base material; and laminating a silicon carbide layer on the surface of the graphite base material. In the step for laminating the silicon carbide layer, the silicon carbide layer can be laminated such that the thickness of the silicon carbide layer is 0.01 to 1 times the thickness of the graphite base material, in order to improve the durability of the component including the silicon carbide layer.
Inventors:
WEON JONG-HWA (KR)
KOO BUN-HEI (KR)
HWANG IN-SU (KR)
KIM NAM-JU (KR)
KO MYUNG-JIN (KR)
LEE JI-HOON (KR)
CHO HYEON-JUN (KR)
KOO BUN-HEI (KR)
HWANG IN-SU (KR)
KIM NAM-JU (KR)
KO MYUNG-JIN (KR)
LEE JI-HOON (KR)
CHO HYEON-JUN (KR)
Application Number:
PCT/KR2021/001142
Publication Date:
August 12, 2021
Filing Date:
January 28, 2021
Export Citation:
Assignee:
KNJ CO LTD (KR)
International Classes:
C04B35/52; C04B41/50; C04B41/53; C04B41/87; C04B41/91; H01L33/00; H01L33/02
Foreign References:
| KR20180071952A | 2018-06-28 | |||
| KR20090108151A | 2009-10-15 | |||
| JP2015046536A | 2015-03-12 | |||
| JPH10195655A | 1998-07-28 | |||
| KR101393459B1 | 2014-05-12 |
Attorney, Agent or Firm:
CHO, Young Hyun (KR)
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