Title:
COMPONENT FOR PLASMA PROCESSING APPARATUS, AND METHOD FOR MANUFACTURING COMPONENT FOR PLASMA PROCESSING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2013/176168
Kind Code:
A1
Abstract:
This component for a plasma processing apparatus is provided with a base material, a base layer covering the surface of the base material, and an yttrium oxide film covering the surface of the base layer. The base layer is composed of a metal oxide film having a heat conductivity of 35 W/m∙K or less, and the yttrium oxide film includes an yttrium oxide granular portion wherein a grain boundary is observed and/or an yttrium oxide non-granular portion wherein the grain boundary is not observed. The yttrium oxide film has a film thickness of 10 μm or more, and a film density of 96% or more, the area ratio of the granular portion in an observation range of 20 μm×20 μm within the surface of the yttrium oxide film is 0-20 %, and the area ratio of the non-granular portion in the observation range is 80-100%.
Inventors:
SATO MICHIO
HINO TAKASHI
NAKATANI MASASHI
HINO TAKASHI
NAKATANI MASASHI
Application Number:
PCT/JP2013/064186
Publication Date:
November 28, 2013
Filing Date:
May 22, 2013
Export Citation:
Assignee:
TOSHIBA KK (JP)
TOSHIBA MATERIALS CO LTD (JP)
TOSHIBA MATERIALS CO LTD (JP)
International Classes:
C23C4/10; H01L21/3065; C23C24/04; C23C28/04
Foreign References:
| JP2001164354A | 2001-06-19 | |||
| JP2009293061A | 2009-12-17 | |||
| JP2004002101A | 2004-01-08 | |||
| JP2005158933A | 2005-06-16 | |||
| JP2010283361A | 2010-12-16 |
Attorney, Agent or Firm:
TOKYO INTERNATIONAL PATENT FIRM (JP)
Patent business corporation Tokyo international patent firm (JP)
Patent business corporation Tokyo international patent firm (JP)
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