Title:
COMPOSITE STRUCTURE COMPRISING A MONOCRYSTALLINE THIN FILM ON A POLYCRYSTALLINE SILICON CARBIDE SUPPORT SUBSTRATE, AND ASSOCIATED MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/186498
Kind Code:
A1
Abstract:
The invention relates to a composite structure for manufacturing microelectronic components, comprising a monocrystalline thin film disposed on a polycrystalline silicon carbide support substrate, said support substrate having a preferred crystalline orientation according to which: - a texture coefficient C422 is less than 30%, and - a texture coefficient C220 is greater than 60% or the sum of texture coefficients C111+C222+C511 is greater than 70%. The invention also relates to a method for manufacturing such a composite structure.
Inventors:
BIARD HUGO (FR)
POTIER ALEXANDRE (FR)
FERRATO MARC (FR)
LEFEVRE PABLO (FR)
POTIER ALEXANDRE (FR)
FERRATO MARC (FR)
LEFEVRE PABLO (FR)
Application Number:
PCT/EP2023/056240
Publication Date:
October 05, 2023
Filing Date:
March 10, 2023
Export Citation:
Assignee:
SOITEC SILICON ON INSULATOR (FR)
International Classes:
H01L21/02; C23C16/00; C30B28/14; C30B29/36; C30B33/06; H01L21/18; H01L21/04; H01L29/16
Foreign References:
| US10934634B2 | 2021-03-02 | |||
| US10934634B2 | 2021-03-02 |
Other References:
GUY CHICHIGNOUD ET AL: "Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding", MATERIALS SCIENCE FORUM, vol. 527-529, 15 October 2006 (2006-10-15), pages 71 - 74, XP055342308, DOI: 10.4028/www.scientific.net/MSF.527-529.71
G.HARRIS: "X. Quantitative measurement of preferred orientation in rolled uranium bars", PHILOSOPHICAL MAGAZINE SERIES, vol. 7, no. 43, 1952, pages 336
G.HARRIS: "X. Quantitative measurement of preferred orientation in rolled uranium bars", PHILOSOPHICAL MAGAZINE SERIES, vol. 7, no. 43, 1952, pages 336
Attorney, Agent or Firm:
IP TRUST (FR)
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