Title:
COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING DEVICE HAVING COMPOSITE STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2023/162743
Kind Code:
A1
Abstract:
Disclosed are a member which is for a semiconductor manufacturing device and which exhibits excellent particle resistance (low-particle generation) and the semiconductor manufacturing device. This composite structure comprises a base material, and a structure which is provided on the base material and has a surface exposed to a plasma atmosphere. The structure includes a Y2SiO5 crystal as a main component. A lattice constant of the crystal satisfies at least one of a>9.06, b>6.93, and c>7.70, a peak intensity ratio (300)/(121) which is a ratio of a (300) peak to a (121) peak in X‐ray diffraction of the crystal is higher than 100%, or indentation hardness of the crystal is higher than 7.5 GPa. This composite structure exhibits excellent particle resistance and is preferably used as a member for a semiconductor manufacturing device.
Inventors:
ASHIZAWA HIROAKI (JP)
TAKIZAWA RYOTO (JP)
SUNABA YUKI (JP)
TAKIZAWA RYOTO (JP)
SUNABA YUKI (JP)
Application Number:
PCT/JP2023/004710
Publication Date:
August 31, 2023
Filing Date:
February 13, 2023
Export Citation:
Assignee:
TOTO LTD (JP)
International Classes:
H01L21/3065; C23C24/04; H01L21/205; H01L21/31
Domestic Patent References:
| WO2020004563A1 | 2020-01-02 |
Foreign References:
| JP2001031466A | 2001-02-06 | |||
| KR102259919B1 | 2021-06-07 | |||
| JP2020521709A | 2020-07-27 |
Attorney, Agent or Firm:
KONNO, Akio et al. (JP)
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