Title:
COMPOSITE SUBSTRATE, ELECTRONIC COMPONENT, METHOD FOR PRODUCING COMPOSITE SUBSTRATE, AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT
Document Type and Number:
WIPO Patent Application WO/2012/015022
Kind Code:
A1
Abstract:
[Problem] Provided are: a composite substrate which comprises a silicon substrate having excellent crystallinity; a method for producing a composite substrate; and a method for manufacturing a semiconductor element.
[Solution] A composite substrate (1) is obtained by bonding a semiconductor substrate (20) on an electrically insulating supporting substrate (10). The semiconductor substrate (20) is formed of silicon. The semiconductor substrate (20) comprises a plurality of first regions (20x), in each of which an element portion functioning as a semiconductor element is formed, and a second region (20y) which is located between the first regions (20x). The semiconductor substrate (20) is provided with an oxidized portion (22) in a lower main surface (20b) of the second region (20y), said oxidized portion (22) being formed of silicon oxide.
Inventors:
KITADA, Masanobu (R&D Center 3-5-3, Hikaridai, Seika-cho, Soraku-gu, Kyoto 37, 〒6190237, JP)
Application Number:
JP2011/067385
Publication Date:
February 02, 2012
Filing Date:
July 29, 2011
Export Citation:
Assignee:
KYOCERA CORPORATION (6 Takeda Tobadono-cho, Fushimi-ku kyoto-sh, Kyoto 01, 〒6128501, JP)
京セラ株式会社 (〒01 京都府京都市伏見区竹田鳥羽殿町６番地 Kyoto, 〒6128501, JP)
京セラ株式会社 (〒01 京都府京都市伏見区竹田鳥羽殿町６番地 Kyoto, 〒6128501, JP)
International Classes:
H01L27/12; H01L21/02; H01L21/762
Claims:
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