Title:
COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2018/135163
Kind Code:
A1
Abstract:
Provided are a composite substrate capable of maintaining high resistance after being processed at 300°C, and a method for manufacturing the composite substrate. This composite substrate is characterized by being manufactured by sticking, to a piezoelectric material substrate, a silicon (Si) wafer having an interstitial oxygen concentration of 2-10 ppma as a support substrate, and thinning the piezoelectric material substrate after sticking. The piezoelectric material substrate is particularly preferably a lithium tantalate wafer (LT) substrate or a lithium niobate (LN) substrate.
Inventors:
AKIYAMA SHOJI (JP)
SHIRAI SHOZO (JP)
TANNO MASAYUKI (JP)
SHIRAI SHOZO (JP)
TANNO MASAYUKI (JP)
Application Number:
PCT/JP2017/043767
Publication Date:
July 26, 2018
Filing Date:
December 06, 2017
Export Citation:
Assignee:
SHINETSU CHEMICAL CO (JP)
International Classes:
H01L21/02; H01L27/12; H03H9/25
Foreign References:
| JP2004304622A | 2004-10-28 | |||
| JP2002184960A | 2002-06-28 | |||
| JP2010045260A | 2010-02-25 | |||
| US6544656B1 | 2003-04-08 |
Other References:
"Dempa Shi rrbun High Technology", November 2012, TAI YO YUDEN CO. , LT D., article "Temperature Corrpensation Technology for SAW Dupl exer Used in RF Front End of Smart phone"
"Realize Science and Technology Center", 28 June 1996, article "Science of Silicon", pages: 576 - 582
See also references of EP 3573088A4
"Realize Science and Technology Center", 28 June 1996, article "Science of Silicon", pages: 576 - 582
See also references of EP 3573088A4
Attorney, Agent or Firm:
ORISAKA Shigeki (JP)
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