Title:
COMPOSITE WAFER AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/176701
Kind Code:
A1
Abstract:
Provided are: a composite wafer manufacturing method comprising a step for preparing a first substrate in which a first layer of any among oxide, oxynitride, and nitride is disposed on one surface thereof, a step for preparing a second substrate in which a second layer of any among oxide, oxynitride, and nitride is disposed on one surface thereof, a step for forming a silicon layer on one surface of either the first layer or second layer, a step for using plasma to activate at least one surface of the silicon layer as well as that of the other of either the first layer or second layer, and a step for bonding the first substrate and second substrate together; and a composite wafer obtained by using said manufacturing method.
Inventors:
AKIYAMA SHOJI (JP)
Application Number:
PCT/JP2022/004850
Publication Date:
August 25, 2022
Filing Date:
February 08, 2022
Export Citation:
Assignee:
SHINETSU CHEMICAL CO (JP)
International Classes:
H01L21/02; H01L27/12
Domestic Patent References:
| WO2018088093A1 | 2018-05-17 |
Foreign References:
| JPH01230255A | 1989-09-13 | |||
| JP2017538297A | 2017-12-21 | |||
| JP2018137278A | 2018-08-30 | |||
| JPH10256263A | 1998-09-25 | |||
| JP6396852B2 | 2018-09-26 |
Other References:
Q.-Y.TONGU.GOSELE ET AL.: "Semiconductor Wafer Bonding-Science and Technology", 1999, JOHN WILEY & SONS, INC., pages: 25 - 28
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
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