COMPOSITION FOR ANTIREFLECTION FILM FORMATION

Title:

COMPOSITION FOR ANTIREFLECTION FILM FORMATION

Document Type and Number:

WIPO Patent Application WO/2004/008253

Kind Code:

A1

Abstract:

A composition for antireflection film formation which comprises a urea compound substituted by hydroxyalkyl or alkoxyalkyl and preferably contains a light-absorbing compound and/or light-absorbing resin; a method of forming an antireflection film for a semiconductor device, which comprises using the composition; and a process for producing a semiconductor device, which comprises using the composition. The composition satisfactorily absorbs light having wavelengths for use in semiconductor device production. The composition is hence highly effective in eliminating reflected light. It further has a higher dry-etching rate than photoresist layers.

Inventors:

KISHIOKA TAKAHIRO (JP)
ARASE SHINYA (JP)
MIZUSAWA KEN-ICHI (JP)
NAKAYAMA KEISUKE (JP)

Application Number:

PCT/JP2003/008832

Publication Date:

January 22, 2004

Filing Date:

July 11, 2003

Export Citation:

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Assignee:

NISSAN CHEMICAL IND LTD (JP)
KISHIOKA TAKAHIRO (JP)
ARASE SHINYA (JP)
MIZUSAWA KEN-ICHI (JP)
NAKAYAMA KEISUKE (JP)

International Classes:

C08K5/00; C08L61/24; C08L101/00; G03F7/11; G03F7/09; H01L21/027; (IPC1-7): G03F7/11; H01L21/027

Domestic Patent References:

WO2002069046A1

2002-09-06

Foreign References:

JP2002148791A	2002-05-22
JP2000221690A	2000-08-11
JP2001005186A	2001-01-12
US6083665A	2000-07-04
JPH1184673A	1999-03-26
JP2000010293A	2000-01-14
JPH10333336A	1998-12-18
US6090531A	2000-07-18

Other References: