Title:
COMPOSITION FOR CHEMICAL-MECHANICAL POLISHING SLURRY
Document Type and Number:
WIPO Patent Application WO/2010/077010
Kind Code:
A3
Abstract:
A composition for chemical-mechanical polishing slurry is disclosed, wherein the polishing rate and selectivity with respect to a metal film are improved. The composition for chemical-mechanical polishing slurry comprises an oxidant, an anticorrosive agent, an organic acid and/or organic amino compounds, water, and one or more polishing enhancers selected from a group consisting of selenium compounds, tellurium compounds, and sulfur compounds. Preferably, the content of the polishing enhancers is 0.001 to 5 wt % of the total slurry composition, and the composition for chemical-mechanical polishing slurry has a pH level of 2 to 6.
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Inventors:
KIM TAEK-RAE (KR)
KONG HYUN-GOO (KR)
PARK JONG-DAI (KR)
KONG HYUN-GOO (KR)
PARK JONG-DAI (KR)
Application Number:
PCT/KR2009/007719
Publication Date:
August 26, 2010
Filing Date:
December 23, 2009
Export Citation:
Assignee:
DONGJIN SEMICHEM CO LTD (KR)
KIM TAEK-RAE (KR)
KONG HYUN-GOO (KR)
PARK JONG-DAI (KR)
KIM TAEK-RAE (KR)
KONG HYUN-GOO (KR)
PARK JONG-DAI (KR)
International Classes:
C09K3/14
Foreign References:
| JP2004356326A | 2004-12-16 | |||
| KR20040089044A | 2004-10-20 | |||
| JP2003193036A | 2003-07-09 | |||
| JP2005183684A | 2005-07-07 |
Attorney, Agent or Firm:
LEE, Sang-Hun (Yeong-Won Bldg. Suite 503739-5, Yeoksam-Dong, Gangnam-Gu, Seoul 135-924, KR)
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