Title:
COMPOSITION FOR ETCHING SILICON NITRIDE FILM AND ETCHING METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2019/225856
Kind Code:
A1
Abstract:
Disclosed are a composition for etching a silicon nitride film, the composition comprising: a phosphoric acid compound; water; and one or more of a certain silane-based compound and a reaction product thereof, and an etching method using same.
Inventors:
HWANG KI WOOK (KR)
KOH SANG RAN (KR)
CHO YOUN JIN (KR)
CHOI JUNG MIN (KR)
HAN KWEN WOO (KR)
JANG JUN YOUNG (KR)
YOON YONG WOON (KR)
KOH SANG RAN (KR)
CHO YOUN JIN (KR)
CHOI JUNG MIN (KR)
HAN KWEN WOO (KR)
JANG JUN YOUNG (KR)
YOON YONG WOON (KR)
Application Number:
PCT/KR2019/004073
Publication Date:
November 28, 2019
Filing Date:
April 05, 2019
Export Citation:
Assignee:
SAMSUNG SDI CO LTD (KR)
International Classes:
C09K13/06; H01L21/306
Foreign References:
| KR20140079267A | 2014-06-26 | |||
| KR101144366B1 | 2012-05-21 | |||
| KR20150047068A | 2015-05-04 | |||
| KR20180023086A | 2018-03-07 | |||
| KR20160093551A | 2016-08-08 |
Attorney, Agent or Firm:
AJU INTERNATIONAL LAW & PATENT GROUP (KR)
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