Title:
COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM WHICH CONTAINS FULLERENE DERIVATIVE
Document Type and Number:
WIPO Patent Application WO/2011/108365
Kind Code:
A1
Abstract:
Disclosed is a composition which enables the formation of a resist underlayer film having high etching resistance (a low dry etching rate) and excellent solvent resistance.
Specifically disclosed is a composition for forming a resist underlayer film, which comprises a fullerene derivative in which one to six molecules of a malonic acid diester represented by formula (1) (wherein R's independently represent an alkyl group having 1 to 10 carbon atoms) are added per fullerene molecule, a compound having at least two epoxy groups or oxirane rings, and a solvent.
Inventors:
SHINJO TETSUYA (JP)
HASHIMOTO KEISUKE (JP)
OKUYAMA HIROAKI (JP)
SAKAIDA YASUSHI (JP)
KATO MASAKAZU (JP)
HASHIMOTO KEISUKE (JP)
OKUYAMA HIROAKI (JP)
SAKAIDA YASUSHI (JP)
KATO MASAKAZU (JP)
Application Number:
PCT/JP2011/053386
Publication Date:
September 09, 2011
Filing Date:
February 17, 2011
Export Citation:
Assignee:
NISSAN CHEMICAL IND LTD (JP)
SHINJO TETSUYA (JP)
HASHIMOTO KEISUKE (JP)
OKUYAMA HIROAKI (JP)
SAKAIDA YASUSHI (JP)
KATO MASAKAZU (JP)
SHINJO TETSUYA (JP)
HASHIMOTO KEISUKE (JP)
OKUYAMA HIROAKI (JP)
SAKAIDA YASUSHI (JP)
KATO MASAKAZU (JP)
International Classes:
G03F7/11
Domestic Patent References:
| WO2008126804A1 | 2008-10-23 |
Foreign References:
| JP2004264709A | 2004-09-24 | |||
| JP2006227391A | 2006-08-31 | |||
| JP2006227389A | 2006-08-31 | |||
| JP2005266798A | 2005-09-29 | |||
| JP2008513820A | 2008-05-01 |
Attorney, Agent or Firm:
HANABUSA, Tsuneo et al. (JP)
Sepal Tsuneo (JP)
Sepal Tsuneo (JP)
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Claims: