Title:
COMPOSITION FOR FORMING ANTIREFLECTION FILM FOR LITHOGRAPHY
Document Type and Number:
WIPO Patent Application WO/2003/034152
Kind Code:
A1
Abstract:
A composition for forming an antireflection film used in lithography process of semiconductor device manufacture, comprising a polymer (A) having a weight−average molecular weight of 5000 or less and a polymer (B) having a weight−average molecular weight of 2000 or less. The composition is used to produce an antireflection film for lithography, excellent in step coverage of a step on an irregular surface substrate having a hole or a trench, high in antireflection effect, causing no intermixing with a resist layer, enabling formation of an excellent resist pattern, and having a dry−etching rate higher than that of the resist.
Inventors:
TAKEI SATOSHI (JP)
YASUMI YOSHIAKI (JP)
MIZUSAWA KEN-ICHI (JP)
YASUMI YOSHIAKI (JP)
MIZUSAWA KEN-ICHI (JP)
Application Number:
PCT/JP2002/010372
Publication Date:
April 24, 2003
Filing Date:
October 04, 2002
Export Citation:
Assignee:
NISSAN CHEMICAL IND LTD (JP)
TAKEI SATOSHI (JP)
YASUMI YOSHIAKI (JP)
MIZUSAWA KEN-ICHI (JP)
TAKEI SATOSHI (JP)
YASUMI YOSHIAKI (JP)
MIZUSAWA KEN-ICHI (JP)
International Classes:
C08G59/16; C08G59/18; C08G59/32; C08L63/00; C08L71/00; C09D161/06; G02B1/11; G02B1/111; G03F7/09; H01L21/027; C08L33/00; (IPC1-7): G03F7/11; C08G59/14; H01L21/027
Foreign References:
| JPH11154638A | 1999-06-08 | |||
| JP2001040293A | 2001-02-13 | |||
| JP2001022084A | 2001-01-26 | |||
| JP2001081203A | 2001-03-27 | |||
| JP2002333717A | 2002-11-22 |
Attorney, Agent or Firm:
Hanabusa, Tsuneo (Sin-ochanomizu Urban Trinity 2, Kandasurugadai 3-chom, Chiyoda-ku Tokyo, JP)
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