COMPOSITION FOR FORMING PHOTOSENSITIVE RESIST UNDERLAYER FILM

WIPO Patent Application WO/2011/074433

A1

Disclosed is a composition for forming a resist underlayer film that is free from dissolution of a photoacid generator contained therein into the solvent of a coating photoresist and can be alkali developed at the same time when the photoresist film is alkali developed. Specifically disclosed is a composition for forming a resist underlayer film used in a lithography process, which contains a polymer (A), a crosslinkable compound (D), a photoacid generator (E) and a solvent (F). The polymer (A) contains unit structures represented by formula (1), formula (2) and formula (3), and when the total mole number of all the unit structures constituting the polymer is taken as 1.0, the ratio of the mole number (a) of the unit structures represented by formula (1), the ratio of the mole number (b) of the unit structures represented by formula (2) and the ratio of the mole number (c) of the unit structures represented by formula (3) are within the following ranges: 0.20 ≤ a ≤ 0.90, 0.05 ≤ b ≤ 0.60 and 0.001 ≤ c ≤ 0.40. The polymer (A) has a weight average molecular weight of 3,000-100,000.

HORIGUCHI YUSUKE (JP)
UMEZAKI MAKIKO (JP)
FUJITANI NORIAKI (JP)
NISHIMAKI HIROKAZU (JP)
KISHIOKA TAKAHIRO (JP)
HAMADA TAKAHIRO (JP)

PCT/JP2010/071816

June 23, 2011

December 06, 2010

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NISSAN CHEMICAL IND LTD (JP)
HORIGUCHI YUSUKE (JP)
UMEZAKI MAKIKO (JP)
FUJITANI NORIAKI (JP)
NISHIMAKI HIROKAZU (JP)
KISHIOKA TAKAHIRO (JP)
HAMADA TAKAHIRO (JP)

G03F7/095; C08F212/14; C08F220/56; G03F7/004; G03F7/039; G03F7/11; H01L21/027

WO2009038126A1	2009-03-26
WO2005111719A2	2005-11-24
WO2007054813A2	2007-05-18

JP2008015422A	2008-01-24
JPH10213904A	1998-08-11

HANABUSA, Tsuneo et al. (JP)
Sepal Tsuneo (JP)

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