Title:
COMPOSITION FOR FORMING RESIST LOWER-LAYER FILM, RESIST LOWER-LAYER FILM AND METHOD FOR FORMING SAME, AND METHOD FOR MANUFACTURING PATTERNED SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2018/051930
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: a composition for forming a resist lower-layer film that allows the formation of a resist lower-layer film with outstanding flatness and outstanding solvent resistance and etching resistance; a resist lower-layer film and a method for forming the resist lower-layer film; and a method for manufacturing a patterned substrate. The present invention is a composition for forming a resist lower-layer film that contains a solvent and a first compound that includes an oxazine ring fused to an aromatic ring. It is preferable for the first compound to have a partial structure represented by formula (1). In formula (1), R2-R5 are each independently a hydrogen atom or a monovalent organic group with a carbon number of 1-20. Ar1 is a group in which hydrogen atoms on (n + 3) or (n + 2) aromatic rings are excluded from an arene with a carbon number of 6-20. R6 is a hydroxy group, a halogen atom, a nitro group, or a monovalent organic group with a carbon number of 1-20. n is an integer between 0-9.
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Inventors:
TAKANASHI KAZUNORI (JP)
NAKATSU HIROKI (JP)
SAKAI KAZUNORI (JP)
MIURA ICHIHIRO (JP)
NAKATSU HIROKI (JP)
SAKAI KAZUNORI (JP)
MIURA ICHIHIRO (JP)
Application Number:
PCT/JP2017/032592
Publication Date:
March 22, 2018
Filing Date:
September 08, 2017
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
G03F7/11; C07D265/12; C07D265/14; C07D413/14; G03F7/20; H01L21/027
Domestic Patent References:
| WO2013115097A1 | 2013-08-08 | |||
| WO2015115598A1 | 2015-08-06 |
Foreign References:
| JPH0419749A | 1992-01-23 | |||
| JP2013190698A | 2013-09-26 |
Attorney, Agent or Firm:
AMANO Kazunori (JP)
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