Title:
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR LITHOGRAPHY, WHICH CONTAINS FLUORENE-CONTAINING RESIN
Document Type and Number:
WIPO Patent Application WO/2010/041626
Kind Code:
A1
Abstract:
A composition for forming a resist underlayer film which has heat resistance required for use in a lithography process during production of a semiconductor device. The composition for forming a resist underlayer film contains a polymer which contains a unit structure represented by formula (1). (In the formula, R1, R2, R3 and R4 each represents an alkyl group having 1-10 carbon atoms, an aryl group having 6-20 carbon atoms, a halogen group, a nitro group or an amino group; R5 and R6 each represents a hydrogen atom, an alkyl group having 1-10 carbon atoms or a glycidyl group; Ar represents an arylene group having 6-20 carbon atoms; and n1 and n2 each represents an integer of 0-4, n3 represents an integer from 0 to (6-n5), n4 represents an integer from 0 to (6-n6), and n5 and n6 each represents an integer of 1-6, with n3 + n5 being an integer of 1-6 and n4 + n6 being an integer of 1-6.)
Inventors:
SHINJO TETSUYA (JP)
SUN JUN (JP)
HASHIMOTO KEISUKE (JP)
SUN JUN (JP)
HASHIMOTO KEISUKE (JP)
Application Number:
PCT/JP2009/067338
Publication Date:
April 15, 2010
Filing Date:
October 05, 2009
Export Citation:
Assignee:
NISSAN CHEMICAL IND LTD (JP)
SHINJO TETSUYA (JP)
SUN JUN (JP)
HASHIMOTO KEISUKE (JP)
SHINJO TETSUYA (JP)
SUN JUN (JP)
HASHIMOTO KEISUKE (JP)
International Classes:
G03F7/11; C08G61/02; C08L35/00
Foreign References:
| JP2007099741A | 2007-04-19 | |||
| JP2007199653A | 2007-08-09 | |||
| JP2005128509A | 2005-05-19 | |||
| JP2008274250A | 2008-11-13 |
Attorney, Agent or Firm:
HANABUSA, Tsuneo et al. (JP)
Sepal Tsuneo (JP)
Sepal Tsuneo (JP)
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