COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, LITHOGRAPHY UNDERLAYER FILM USING SAME, PATTERN FORMING METHOD, COMPOUND, AND METHOD FOR PRODUCING SAME

Title:

COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, LITHOGRAPHY UNDERLAYER FILM USING SAME, PATTERN FORMING METHOD, COMPOUND, AND METHOD FOR PRODUCING SAME

Document Type and Number:

WIPO Patent Application WO/2017/188450

Kind Code:

A1

Abstract:

This composition for forming a resist underlayer film includes a tellurium-containing compound or tellurium-containing resin, and a silicon-containing compound.

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Inventors:

TOIDA TAKUMI (JP)
MAKINOSHIMA TAKASHI (JP)
SATO TAKASHI (JP)
ECHIGO MASATOSHI (JP)

Application Number:

PCT/JP2017/017090

Publication Date:

November 02, 2017

Filing Date:

April 28, 2017

Export Citation:

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Assignee:

MITSUBISHI GAS CHEMICAL CO (JP)

International Classes:

G03F7/11; C08G79/00; G03F7/20; G03F7/26; C08G77/58

Domestic Patent References:

WO2017033943A1

2017-03-02

Foreign References:

JPS5219516A	1977-02-14
JPH0239156A	1990-02-08
JPH1048831A	1998-02-20
JP2015197596A	2015-11-09

Other References:

K.K.VERMA: "SUNIL VERMA, Studies on some unsymmetrical bis(hydroxyaryl) tellurium(IV), Proceedings of the National Academy of Sciences , India Section A", PHYSICAL SCIE NCES, 2005, pages 171 - 175

Attorney, Agent or Firm:

INABA, Yoshiyuki et al. (JP)

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