COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM, FORMATION METHOD FOR RESIST UNDERLAYER FILM, PRODUCTION METHOD FOR PATTERNED SUBSTRATE, AND COMPOUND

WIPO Patent Application WO/2018/074534

A1

The present invention is a composition for forming a resist underlayer film, the composition containing a solvent and a compound that has a group represented by formula (1). In formula (1): R1 is a C2–10 (m+n)-valent organic group that has two adjacent carbon atoms, a hydroxyl group or an alkoxy group being bonded to one of said two carbon atoms, and a hydrogen atom being bonded to the other; L1 is an ethynediyl group or a substituted or unsubstituted ethenediyl group; R2 is a hydrogen atom or a C1–20 monovalent organic group; n is an integer from 1 to 3; the * indicates a bonding site for a portion of the compound that is not the group represented by formula (1); and m is an integer from 1 to 3.

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NOSAKA NAOYA (JP)
WAKAMATSU GOJI (JP)
ABE TSUBASA (JP)
MATSUMURA YUUSHI (JP)
TAKIMOTO YOSHIO (JP)
NAKAFUJI SHIN-YA (JP)
SAKAI KAZUNORI (JP)

PCT/JP2017/037766

April 26, 2018

October 18, 2017

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JSR CORP (JP)

G03F7/11; C07C33/28; C07C35/44; C07C43/166; C08F299/02; G03F7/20; G03F7/26; H01L21/027

WO2014038680A1	2014-03-13
WO2015122296A1	2015-08-20
WO2017154921A1	2017-09-14

JP2017151389A

2017-08-31

AMANO Kazunori (JP)

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