Title:
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM HAVING IMPROVED FLATTENING PROPERTIES
Document Type and Number:
WIPO Patent Application WO/2018/235949
Kind Code:
A1
Abstract:
[Problem] To provide a method including a step of applying onto an upper surface of a semiconductor substrate having a terraced part and an non-terraced part to produce a resist underlayer film, whereby it becomes possible to reduce the iso-dense bias (reverse bump) between the terraced part and the non-terraced part in the resist underlayer film by 5 nm or more. [Solution] A method for reducing the iso-dense bias in a resist underlayer film, the method including the steps of: adding (C) a fluorine-containing surfactant to a resist underlayer film formation composition containing (A) a polymer and (D) a solvent; and applying the composition containing the fluorine-containing surfactant (C) onto an upper surface of a semiconductor substrate having a terraced part and a non-terraced part. The method makes it possible to reduce the iso-dense bias (reverse bump) in the resist underlayer film having the terraced part and the non-terraced part by 5 nm or more.
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Inventors:
NISHIMAKI HIROKAZU (JP)
ENDO TAKAFUMI (JP)
ENDO TAKAFUMI (JP)
Application Number:
PCT/JP2018/023849
Publication Date:
December 27, 2018
Filing Date:
June 22, 2018
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
G03F7/11; C08G61/12; G03F7/20
Domestic Patent References:
| WO2016072316A1 | 2016-05-12 | |||
| WO2017069063A1 | 2017-04-27 | |||
| WO2006115044A1 | 2006-11-02 |
Attorney, Agent or Firm:
HANABUSA PATENT & TRADEMARK OFFICE (JP)
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