Title:
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM
Document Type and Number:
WIPO Patent Application WO/2022/030468
Kind Code:
A1
Abstract:
The present invention provides a novel composition for forming a resist underlayer film, said composition being capable of forming a hydrophobic underlayer film that has a high contact angle with pure water and exhibits high adhesion to an upper layer film, thereby being not susceptible to separation therefrom, while meeting the requirement of good coatability, said composition being also capable of exhibiting other good characteristics such as sufficient resistance to a chemical agent that is used for resist underlayer films. A composition for forming a resist underlayer film, said composition containing a solvent and a polymer that comprises a unit structure (A) represented by formula (1) and/or formula (2).
(In the formulae, each of Ar1 and Ar2 represents a benzene ring or a naphthalene ring; Ar3 represents an aromatic compound which may contain a nitrogen atom, while having from 6 to 60 carbon atoms; R1 and R2 respectively represent groups that substitute hydrogen atoms on the rings of Ar1 and Ar2; each of R3 and R8 represents a group that is selected from the group consisting of an alkyl group having from 1 to 10 carbon atoms, an alkenyl group having from 2 to 10 carbon atoms, an alkynyl group having from 2 to 10 carbon atoms, an aryl group having from 6 to 40 carbon atoms, and a combination of these groups; each of R4 and R6 represents an atom or group that is selected from the group consisting of a hydrogen atom, a trifluoromethyl group, an aryl group having from 6 to 40 carbon atoms and a heterocyclic group; each of R5 and R7 represents an atom or group that is selected from the group consisting of a hydrogen atom, a trifluoromethyl group, an aryl group having from 6 to 40 carbon atoms and a heterocyclic group; each of n1 and n2 represents an integer from 0 to 3; n3 represents an integer from 1 to the number of substituents with which Ar3 is able to be substituted; and n4 represents 0 or 1, and in cases where n4 is 0, R8 is bonded to a nitrogen atom contained in Ar3.)
Inventors:
TOKUNAGA HIKARU (JP)
NAKAJIMA MAKOTO (JP)
NISHIMAKI HIROKAZU (JP)
NAKAJIMA MAKOTO (JP)
NISHIMAKI HIROKAZU (JP)
Application Number:
PCT/JP2021/028713
Publication Date:
February 10, 2022
Filing Date:
August 03, 2021
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
C08G61/00; G03F7/11; G03F7/20
Domestic Patent References:
| WO2013047516A1 | 2013-04-04 | |||
| WO2015098594A1 | 2015-07-02 | |||
| WO2014208499A1 | 2014-12-31 |
Foreign References:
| JP2017125182A | 2017-07-20 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
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