Title:
COMPOSITION FOR FORMING SILICEOUS FILM AND PROCESS FOR PRODUCING SILICEOUS FILM FROM THE SAME
Document Type and Number:
WIPO Patent Application WO/2008/029834
Kind Code:
A1
Abstract:
A composition for siliceous-film formation which can form a siliceous film having high evenness and is reduced in the degree of thickness shrinkage; and a method of forming a trench isolation structure by which a trench can be evenly filled to its inner part even when the trench has an extremely small width. The composition for siliceous-film formation comprises: a polysilazane compound obtained by the coammonolysis of either a halosilane compound alone or a combination of two or more halosilane compounds; and a solvent. Also provided is a process for producing a siliceous film which comprises applying the composition for siliceous-film formation to a surface of a silicon substrate and subjecting the composition to a heat treatment at below 1,000°C in an oxygen atmosphere or steam-containing oxidizing atmosphere to convert the composition to a silicon dioxide film.
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Inventors:
HAYASHI, Masanobu (3330 Chihama, Kakegawa-sh, Shizuoka 12, 4371412, JP)
Application Number:
JP2007/067284
Publication Date:
March 13, 2008
Filing Date:
September 05, 2007
Export Citation:
Assignee:
AZ Electronic Materials (Japan) K.K. (Bunkyo Green Court, 28-8 Honkomagome 2-chome, Bun,kyo-k, Tokyo 21, 1130021, JP)
ＡＺエレクトロニックマテリアルズ株式会社 (〒21 東京都文京区本駒込２丁目２８番８号 文京グリーンコート Tokyo, 1130021, JP)
AZ Electronic Materials USA CORP. (70 Meister Avenue, Somerville New Jersey, 08876, US)
ＡＺエレクトロニックマテリアルズ株式会社 (〒21 東京都文京区本駒込２丁目２８番８号 文京グリーンコート Tokyo, 1130021, JP)
AZ Electronic Materials USA CORP. (70 Meister Avenue, Somerville New Jersey, 08876, US)
International Classes:
H01L21/316; C01B33/12; C08G77/62; C09D183/00; H01L21/312; H01L21/76
Attorney, Agent or Firm:
YOSHITAKE, Kenji et al. (Kyowa Patent & Law Office, Room 323 Fuji Bldg., 2-3, Marunouchi 3-chome, Chiyoda-k, Tokyo 05, 1000005, JP)
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