Title:
COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM, AND PATTERN FORMING METHOD
Document Type and Number:
WIPO Patent Application WO/2022/034831
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing, inter alia, a composition for forming a resist underlayer film for lithography, the composition being characterized by having excellent planarization performance on a stepped substrate, having good embeddability into a fine hole pattern, and in that the wafer surface after film formation is planarized. This problem can be solved by a composition for forming an underlayer film for lithography, the composition containing a compound having a protecting group.
Inventors:
YAMAMOTO HIROAKI (JP)
IWASAKI ATSUKO (JP)
MAKINOSHIMA TAKASHI (JP)
ECHIGO MASATOSHI (JP)
IWASAKI ATSUKO (JP)
MAKINOSHIMA TAKASHI (JP)
ECHIGO MASATOSHI (JP)
Application Number:
PCT/JP2021/028785
Publication Date:
February 17, 2022
Filing Date:
August 03, 2021
Export Citation:
Assignee:
MITSUBISHI GAS CHEMICAL CO (JP)
International Classes:
C08G8/28; C08G8/36; C08G12/40; C08G12/44; C08G61/02; G03F7/11; G03F7/26; H01L21/027
Domestic Patent References:
| WO2010041626A1 | 2010-04-15 |
Foreign References:
| JP2010271654A | 2010-12-02 | |||
| JP2015018220A | 2015-01-29 | |||
| JP2020184067A | 2020-11-12 |
Attorney, Agent or Firm:
INABA, Yoshiyuki et al. (JP)
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