COMPOSITION FOR FORMING UNDERLYING FILM CONTAINING DEXTRIN ESTER COMPOUND

Title:

COMPOSITION FOR FORMING UNDERLYING FILM CONTAINING DEXTRIN ESTER COMPOUND

Document Type and Number:

WIPO Patent Application WO/2005/043248

Kind Code:

A1

Abstract:

[PROBLEMS] Disclosed is a composition for forming an underlying film for lithography which is used in a lithography process in semiconductor device production. Also disclosed is an underlying film for lithography which has a higher dry etching rate than a photoresist and does not cause intermixing with the photoresist. [MEANS FOR SOLVING PROBLEMS] The composition for forming an underlying film for lithography contains a dextrin ester compound wherein at least 50% of hydroxyl groups are transformed to ester groups, a crosslinkable compound and an organic solvent.

Inventors:

TAKEI SATOSHI (JP)
SAKAIDA YASUSHI (JP)
SHINJO TETSUYA (JP)

Application Number:

PCT/JP2004/016129

Publication Date:

May 12, 2005

Filing Date:

October 29, 2004

Export Citation:

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Assignee:

NISSAN CHEMICAL IND LTD (JP)
TAKEI SATOSHI (JP)
SAKAIDA YASUSHI (JP)
SHINJO TETSUYA (JP)

International Classes:

G03F7/09; G03F7/11; H01L21/027; (IPC1-7): G03F7/11; H01L21/027

Domestic Patent References:

WO2002005035A1	2002-01-17
WO2004061526A1	2004-07-22

Foreign References:

JP2002047430A	2002-02-12
JP2000294504A	2000-10-20
JPS6262521A	1987-03-19
JP2002107938A	2002-04-10

Other References: