Title:
COMPOSITION OF MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS
Document Type and Number:
WIPO Patent Application WO/2011/159583
Kind Code:
A3
Abstract:
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.
Inventors:
KREUPL FRANZ (DE)
BANDYOPADHYAY ABHIJIT (US)
CHEN YUNG-TIN (US)
FU CHU-CHEN (US)
JAYASEKARA WIPUL PEMSIRI (US)
KAI JAMES (US)
MAKALA RAGHUVEER S (US)
RABKIN PETER (US)
SAMACHISA GEORGE (US)
ZHANG JINGYAN (US)
BANDYOPADHYAY ABHIJIT (US)
CHEN YUNG-TIN (US)
FU CHU-CHEN (US)
JAYASEKARA WIPUL PEMSIRI (US)
KAI JAMES (US)
MAKALA RAGHUVEER S (US)
RABKIN PETER (US)
SAMACHISA GEORGE (US)
ZHANG JINGYAN (US)
Application Number:
PCT/US2011/040105
Publication Date:
June 14, 2012
Filing Date:
June 10, 2011
Export Citation:
Assignee:
SANDISK 3D LLC (US)
KREUPL FRANZ (DE)
BANDYOPADHYAY ABHIJIT (US)
CHEN YUNG-TIN (US)
FU CHU-CHEN (US)
JAYASEKARA WIPUL PEMSIRI (US)
KAI JAMES (US)
MAKALA RAGHUVEER S (US)
RABKIN PETER (US)
SAMACHISA GEORGE (US)
ZHANG JINGYAN (US)
KREUPL FRANZ (DE)
BANDYOPADHYAY ABHIJIT (US)
CHEN YUNG-TIN (US)
FU CHU-CHEN (US)
JAYASEKARA WIPUL PEMSIRI (US)
KAI JAMES (US)
MAKALA RAGHUVEER S (US)
RABKIN PETER (US)
SAMACHISA GEORGE (US)
ZHANG JINGYAN (US)
International Classes:
H01L27/24; H01L45/00
Domestic Patent References:
| WO2010118380A2 | 2010-10-14 |
Foreign References:
| US20080011996A1 | 2008-01-17 | |||
| US20080191261A1 | 2008-08-14 | |||
| US20090140232A1 | 2009-06-04 | |||
| DE102008050762A1 | 2010-05-12 | |||
| US20100238703A1 | 2010-09-23 | |||
| US20100038791A1 | 2010-02-18 |
Other References:
WANG Y ET AL: "Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications", NANOTECHNOLOGY, vol. 21, no. 4, 29 January 2010 (2010-01-29), pages 045202/1 - 6, XP020168771, ISSN: 0957-4484
LINN E ET AL: "Complementary resistive switches for passive nanocrossbar memories", NATURE MATERIALS, vol. 9, May 2010 (2010-05-01), pages 403 - 406, XP002601951, ISSN: 1476-4660, [retrieved on 20100418], DOI: 10.1038/NMAT2748
KAWAHARA T ET AL: "Thermoelectric Properties of and Dopant Distribution in SiC Thin Films", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 38, part 1, no. 8, 15 August 1999 (1999-08-15), pages 4852 - 4856, XP055004744, ISSN: 0021-4922, DOI: 10.1143/JJAP.38.4852
GAO B ET AL: "Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology", 2009 SYMPOSIUM ON VLSI TECHNOLOGY, 16-18 JUNE 2009, KYOTO, JAPAN, 16 June 2009 (2009-06-16), pages 30 - 31, XP031637383, ISBN: 978-1-4244-3308-7
SPIGA S ET AL: "Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition", MICROELECTRONIC ENGINEERING, vol. 85, no. 12, 2008, pages 2414 - 2419, XP025710405, ISSN: 0167-9317, [retrieved on 20080923], DOI: 10.1016/J.MEE.2008.09.018
LEE J ET AL: "Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications", 2010 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, 6-8 DECEMBER 2010, SAN FRANCISCO, CA, 2010, pages 19.5.1 - 19.5.4, XP055018572, ISBN: 978-1-4424-7418-5
LINN E ET AL: "Complementary resistive switches for passive nanocrossbar memories", NATURE MATERIALS, vol. 9, May 2010 (2010-05-01), pages 403 - 406, XP002601951, ISSN: 1476-4660, [retrieved on 20100418], DOI: 10.1038/NMAT2748
KAWAHARA T ET AL: "Thermoelectric Properties of and Dopant Distribution in SiC Thin Films", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 38, part 1, no. 8, 15 August 1999 (1999-08-15), pages 4852 - 4856, XP055004744, ISSN: 0021-4922, DOI: 10.1143/JJAP.38.4852
GAO B ET AL: "Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology", 2009 SYMPOSIUM ON VLSI TECHNOLOGY, 16-18 JUNE 2009, KYOTO, JAPAN, 16 June 2009 (2009-06-16), pages 30 - 31, XP031637383, ISBN: 978-1-4244-3308-7
SPIGA S ET AL: "Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition", MICROELECTRONIC ENGINEERING, vol. 85, no. 12, 2008, pages 2414 - 2419, XP025710405, ISSN: 0167-9317, [retrieved on 20080923], DOI: 10.1016/J.MEE.2008.09.018
LEE J ET AL: "Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications", 2010 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, 6-8 DECEMBER 2010, SAN FRANCISCO, CA, 2010, pages 19.5.1 - 19.5.4, XP055018572, ISBN: 978-1-4424-7418-5
Attorney, Agent or Firm:
MAGEN, Burt (LLP575 Market Street, Suite 250, San Francisco CA, US)
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