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Title:
COMPOSITION FOR POLISHING SEMICONDUCTOR
Document Type and Number:
WIPO Patent Application WO/2005/093804
Kind Code:
A1
Abstract:
Occurrence of polishing flaw on the surface of a semiconductor device is reduced significantly without damaging the advantage of fumed silica, i.e. high polishing speed, regardless of the fact that fumed silica is contained as a polishing agent. When a semiconductor wafer (3) mounted on a pad (2) attached to a polishing plate (1) is polished by rotating the pad (2) and a pressure head (4) while pressing the pressure head (4) against the semiconductor wafer (3) and supplying a polishing composition (5) to the surface of the pad (2), water dispersion of fumed silica where the number of fumed silica particles having a particle size of 0.5 μm or more is 600,000/ml or less and the number of fumed silica particles having a particle size of 1 μm or more is 4,000/ml or less is employed as the polishing composition (5).

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Inventors:
Ohta, Yoshiharu c/o Nitta Haas Incorporated NARA KOJO (172 Ikezawa-ch, Yamatokoriyama-shi Nara 32, 63910, JP)
Itai, Yasuyuki c/o Nitta Haas Incorporated NARA KOJO (172 Ikezawa-ch, Yamatokoriyama-shi Nara 32, 63910, JP)
Application Number:
PCT/JP2005/005768
Publication Date:
October 06, 2005
Filing Date:
March 28, 2005
Export Citation:
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Assignee:
NITTA HAAS INCORPORATED (4-4-26, Sakuragawa Naniwa-k, Osaka-shi Osaka 22, 55600, JP)
Ohta, Yoshiharu c/o Nitta Haas Incorporated NARA KOJO (172 Ikezawa-ch, Yamatokoriyama-shi Nara 32, 63910, JP)
Itai, Yasuyuki c/o Nitta Haas Incorporated NARA KOJO (172 Ikezawa-ch, Yamatokoriyama-shi Nara 32, 63910, JP)
International Classes:
B24B37/00; C09G1/02; C09K3/14; H01L21/304; H01L21/306; B24B37/00; C09G1/00; C09K3/14; H01L21/02; (IPC1-7): H01L21/304
Attorney, Agent or Firm:
Saikyo, Keiichiro (Shikishima Building, 2-6 Bingomachi 3-chome, Chuo-k, Osaka-shi Osaka 51, 54100, JP)
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