Title:
COMPOSITION FOR POLISHING SILICON CARBIDE SUBSTRATE AND METHOD FOR POLISHING SILICON CARBIDE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2011/162265
Kind Code:
A1
Abstract:
Disclosed is a silicon carbide substrate-polishing composition for polishing silicon carbide substrates, said composition comprising colloidal silica particles having a true specific gravity of 2.10-2.30 and water, and having a free alkali metal ion concentration of 1-150 ppm.
Inventors:
SEKIGUCHI, Kazutoshi (NISSAN CHEMICAL INDUSTRIES LTD., 11-1, Kitasode, Sodegaura-sh, Chiba 66, 〒2990266, JP)
関口 和敏 (〒66 千葉県袖ヶ浦市北袖１１番１ 日産化学工業株式会社 機能材料研究所内 Chiba, 〒2990266, JP)
関口 和敏 (〒66 千葉県袖ヶ浦市北袖１１番１ 日産化学工業株式会社 機能材料研究所内 Chiba, 〒2990266, JP)
Application Number:
JP2011/064179
Publication Date:
December 29, 2011
Filing Date:
June 21, 2011
Export Citation:
Assignee:
NISSAN CHEMICAL INDUSTRIES, LTD. (7-1 Kanda Nishiki-cho 3-chome, Chiyoda-ku Tokyo, 54, 〒1010054, JP)
日産化学工業株式会社 (〒54 東京都千代田区神田錦町３丁目７番地１ Tokyo, 〒1010054, JP)
SEKIGUCHI, Kazutoshi (NISSAN CHEMICAL INDUSTRIES LTD., 11-1, Kitasode, Sodegaura-sh, Chiba 66, 〒2990266, JP)
日産化学工業株式会社 (〒54 東京都千代田区神田錦町３丁目７番地１ Tokyo, 〒1010054, JP)
SEKIGUCHI, Kazutoshi (NISSAN CHEMICAL INDUSTRIES LTD., 11-1, Kitasode, Sodegaura-sh, Chiba 66, 〒2990266, JP)
International Classes:
H01L21/304; B24B37/00
Attorney, Agent or Firm:
KURIHARA, Hiroyuki et al. (Kurihara International Patent Office, Iwasaki Bldg. 6F 3-15, Hiroo 1-chome, Shibuya-k, Tokyo 12, 〒1500012, JP)
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Claims:
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