Title:
COMPOSITION FOR POLISHING SILICON CARBIDE
Document Type and Number:
WIPO Patent Application WO/2011/049216
Kind Code:
A1
Abstract:
Provided is a composition for polishing silicon carbide with which it is possible to improve the speed at which an SiC crystal substrate is polished. The composition for polishing silicon carbide comprises abrasive grains, a peroxide as an oxidizer, and a chelator. As a result, it is possible to increase the speed at which a silicon carbide crystal substrate, particularly the (0001) Si face, is polished.
Inventors:
NITTA, Hiroshi (3-17-1 Kannabidai, Kyotanabe-sh, Kyoto 33, 〒6100333, JP)
Application Number:
JP2010/068765
Publication Date:
April 28, 2011
Filing Date:
October 22, 2010
Export Citation:
Assignee:
Nitta Haas Incorporated (4-4-26, Sakuragawa Naniwa-ku, Osaka-sh, Osaka 22, 〒5560022, JP)
ニッタ・ハース株式会社 (〒22 大阪府大阪市浪速区桜川４－４－２６ Osaka, 〒5560022, JP)
ニッタ・ハース株式会社 (〒22 大阪府大阪市浪速区桜川４－４－２６ Osaka, 〒5560022, JP)
International Classes:
B24B37/00; C09K3/14; H01L21/304
Attorney, Agent or Firm:
SAIKYO, Keiichiro (Shikishima Building, 2-6 Bingomachi 3-chome, Chuo-ku, Osaka-sh, Osaka 51, 〒5410051, JP)
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