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Title:
COMPOSITION FOR PRODUCING SEMICONDUCTOR, METHOD FOR PROCESSING ARTICLE TO BE PROCESSED, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2023/162853
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing: a composition for producing a semiconductor by which silicon can be selectively removed when applied to an article to be processed containing silicon-germanium and silicon; a method for processing an article to be processed in which the composition for producing a semiconductor is used; and a method for producing a semiconductor element that uses the composition for producing a semiconductor. The composition for producing a semiconductor according to the present invention has two or more sulfur atoms and is an alkaline composition containing an organic solvent, water, and a specific compound having one or more heteroatoms other than sulfur atoms.

Inventors:
SHIGENOI YUTA (JP)
MIZUTANI ATSUSHI (JP)
TAKAHASHI TOMONORI (JP)
Application Number:
PCT/JP2023/005468
Publication Date:
August 31, 2023
Filing Date:
February 16, 2023
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L21/308; G03F7/40; H01L21/304; H01L21/306
Domestic Patent References:
WO2017126554A12017-07-27
Foreign References:
JP2021019173A2021-02-15
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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