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Title:
COMPOSITION, RESIST-PATTERN FORMING METHOD, AND INSULATING-FILM FORMING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/151403
Kind Code:
A1
Abstract:
Provided are: a composition capable of forming a film having high etching resistance; and a resist-pattern forming method and an insulating-film forming method using said composition. The present invention provides a composition containing a base material (A) and a polyphenol compound (B), wherein the mass ratio of the base material (A) and the polyphenol compound (B) is 5:95 to 95:5. The present invention also provides an insulating-film forming method including a step for developing a photoresist layer after radiation exposure.

Inventors:
SATO TAKASHI (JP)
ECHIGO MASATOSHI (JP)
Application Number:
PCT/JP2019/003406
Publication Date:
August 08, 2019
Filing Date:
January 31, 2019
Export Citation:
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Assignee:
MITSUBISHI GAS CHEMICAL CO (JP)
International Classes:
C08L101/00; C08K5/13; G03F7/004; G03F7/039; G03F7/20
Domestic Patent References:
WO2009072465A12009-06-11
WO2018016640A12018-01-25
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Other References:
SHINJI OKAZAKI ET AL.: "Development of Lithography Technology in These 40 Years", 9 December 2016, S T PUBLISHING INC.
See also references of EP 3747954A4
Attorney, Agent or Firm:
INABA, Yoshiyuki et al. (JP)
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