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Patent Searching and Data


Title:
COMPOSITION, RESIST-PATTERN FORMING METHOD, AND INSULATING-FILM FORMING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/151403
Kind Code:
A1
Abstract:
Provided are: a composition capable of forming a film having high etching resistance; and a resist-pattern forming method and an insulating-film forming method using said composition. The present invention provides a composition containing a base material (A) and a polyphenol compound (B), wherein the mass ratio of the base material (A) and the polyphenol compound (B) is 5:95 to 95:5. The present invention also provides an insulating-film forming method including a step for developing a photoresist layer after radiation exposure.

Inventors:
SATO, Takashi (Inc. Hiratsuka Research Laboratory, 6-2, Higashiyawata 5-chome, Hiratsuka-sh, Kanagawa 16, 〒2540016, JP)
ECHIGO, Masatoshi (Inc. 5-2, Marunouchi 2-chome, Chiyoda-k, Tokyo 24, 〒1008324, JP)
Application Number:
JP2019/003406
Publication Date:
August 08, 2019
Filing Date:
January 31, 2019
Export Citation:
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Assignee:
MITSUBISHI GAS CHEMICAL COMPANY, INC. (5-2 Marunouchi 2-chome, Chiyoda-ku Tokyo, 24, 〒1008324, JP)
International Classes:
C08L101/00; C08K5/13; G03F7/004; G03F7/039; G03F7/20
Domestic Patent References:
WO2009072465A12009-06-11
WO2018016640A12018-01-25
WO2016158169A12016-10-06
Foreign References:
JP2004101818A2004-04-02
JP2004101819A2004-04-02
JP2010107963A2010-05-13
JP2011227492A2011-11-10
JP2009244724A2009-10-22
JP2003015287A2003-01-15
JP2000352823A2000-12-19
JP2018049056A2018-03-29
Attorney, Agent or Firm:
INABA, Yoshiyuki et al. (TMI ASSOCIATES, 23rd Floor Roppongi Hills Mori Tower, 6-10-1, Roppongi, Minato-k, Tokyo 23, 〒1066123, JP)
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