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Title:
COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION FOR FORMING PHOTOCROSSLINKING CURED RESIST UNDERLAYER FILM
Document Type and Number:
WIPO Patent Application WO/2006/115044
Kind Code:
A1
Abstract:
This invention provides an underlayer film, which is used as a layer underlying a photoresist in a lithographic process in semiconductor device production, has a higher dry etching process than the photoresist, does not cause intermixing with the photoresist, and can flatten the surface of a semiconductor substrate having holes with a high aspect ratio. There is also provided a composition for resist underlayer film formation for forming the underlayer film. The composition is adapted for the formation of an underlayer film for use as a layer underlying a photoresist by photoirradiation and contains a polymerizable material and a photopolymerization initiator.

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Inventors:
TAKEI SATOSHI (JP)
SHINJO TETSUYA (JP)
Application Number:
PCT/JP2006/307665
Publication Date:
November 02, 2006
Filing Date:
April 11, 2006
Export Citation:
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Assignee:
NISSAN CHEMICAL IND LTD (JP)
HIDAKA MOTOHIKO (JP)
TAKEI SATOSHI (JP)
SHINJO TETSUYA (JP)
International Classes:
G03F7/11; H01L21/027
Domestic Patent References:
WO2003073164A22003-09-04
WO2003058345A22003-07-17
WO2005111724A12005-11-24
WO2005098542A12005-10-20
WO2002005035A12002-01-17
WO2003073164A22003-09-04
WO2003038887A12003-05-08
Foreign References:
JP2004212907A2004-07-29
JP2004309561A2004-11-04
JP2005015779A2005-01-20
JP2005115532A2005-04-28
JP2005070154A2005-03-17
JP2005300825A2005-10-27
JP2002047430A2002-02-12
JP2002190519A2002-07-05
JP2002128847A2002-05-09
US20030149124A12003-08-07
US20030158286A12003-08-21
Other References:
See also references of EP 1879070A4
Attorney, Agent or Firm:
Hanabusa, Tsuneo c/o Hanabusa, Patent Office (Shin-Ochanomizu Urban Trinity 2, Kandasurugadai 3-chom, Chiyoda-ku Tokyo, JP)
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