Title:
COMPOSITION, AND SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND ETCHING METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2023/163002
Kind Code:
A1
Abstract:
Provided is a composition capable of selectively removing silicon while suppressing damage to silicon oxide. This composition contains: a quaternary ammonium compound; and at least one cationic surfactant selected from the group consisting of an aryl group-containing cationic surfactant and a heteroaryl group-containing cationic surfactant.
Inventors:
OIE TOSHIYUKI (TW)
Application Number:
PCT/JP2023/006334
Publication Date:
August 31, 2023
Filing Date:
February 22, 2023
Export Citation:
Assignee:
MITSUBISHI GAS CHEMICAL CO (JP)
International Classes:
H01L21/308; H01L21/336; H01L29/78
Domestic Patent References:
| WO2020252272A1 | 2020-12-17 |
Foreign References:
| JP2020088391A | 2020-06-04 | |||
| JP2019050364A | 2019-03-28 | |||
| JP2016510175A | 2016-04-04 |
Attorney, Agent or Firm:
KOBAYASHI Hiroshi et al. (JP)
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