COMPOSITION FOR SILICON-CONTAINING-FILM FORMATION, SILICON-CONTAINING FILM, PATTERN FORMATION METHOD, AND POLYSILOXANE

WIPO Patent Application WO/2018/159356

A1

The purpose of the present invention is to provide: a composition for silicon-containing-film formation capable of forming a silicon-containing film which retains removability by etching with a fluorine-based gas and is excellent in terms of inhibition of the falling of resist pattern walls; the silicon-containing film; a pattern formation method; and a polysiloxane. The composition for silicon-containing-film formation comprises a polysiloxane having a group represented by formula (1) and a solvent. In formula (1), L is a single bond or a C1-20 (n+1)-valent organic group, E is a group represented by formula (2-1) or (2-2), Y1 is an (un)substituted C6-20 aryl group or a C1-20 monovalent aliphatic hydrocarbon group in which a hydrogen atom has been replaced with an electron-attracting group, and Y2 is an (un)substituted C6-20 arylenediyl group or a C1-20 divalent aliphatic hydrocarbon group in which a hydrogen atom has been replaced with an electron-attracting group.

OOTSUBO YUUSUKE (JP)
KURITA SHUNSUKE (JP)

PCT/JP2018/005724

September 07, 2018

February 19, 2018

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JSR CORP (JP)

C09D183/08; C08G77/28; C09D7/40; G03F7/11; G03F7/26

WO2016111210A1	2016-07-14
WO2012114864A1	2012-08-30
WO2014098076A1	2014-06-26

JP2016130809A	2016-07-21
JP2000336093A	2000-12-05
JP2010085878A	2010-04-15
JP2011515514A	2011-05-19
JPH05262812A	1993-10-12
JPH03206461A	1991-09-09

AMANO Kazunori (JP)

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