COMPOSITIONS FOR ETCHING TITANIUM NITRIDE HAVING COMPATABILITY WITH SILICON GERMANIDE AND TUNGSTEN

Title:

COMPOSITIONS FOR ETCHING TITANIUM NITRIDE HAVING COMPATABILITY WITH SILICON GERMANIDE AND TUNGSTEN

Document Type and Number:

WIPO Patent Application WO/2016/042408

Kind Code:

A3

Abstract:

Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.

Inventors:

WU HSING-CHEN (TW)
YANG MIN-CHIEH (TW)
TU SHENG-HUNG (TW)

Application Number:

PCT/IB2015/002015

Publication Date:

May 12, 2016

Filing Date:

September 16, 2015

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Assignee:

ATMI TAIWAN CO LTD (CN)

International Classes:

H01L21/311; C09K13/00; C09K13/04; C09K13/08; G03F7/42

Domestic Patent References:

WO2014138064A1	2014-09-12
WO2013101907A1	2013-07-04

Foreign References:

CN101398638A	2009-04-01
US20100035436A1	2010-02-11

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