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Title:
COMPOUND, POLYMER, COMPOSITION, FILM-FORMING COMPOSITION, PATTERN FORMATION METHOD, METHOD FOR FORMING INSULATING FILMS, AND COMPOUND PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2022/138670
Kind Code:
A1
Abstract:
Provided are a compound, polymer, composition, film-forming composition, pattern formation method, method for forming insulating films, and compound production method, that yield a resist that exhibits excellent exposure sensitivity. The compound is represented by formula (1). (In formula (1), RA is a hydrogen atom, methyl group, or trifluoromethyl group; RX is ORB or a hydrogen atom; RB is a substituted or unsubstituted C1-30 alkyl group; and P is a hydroxyl group, alkoxy group, ester group, acetal group, carboxyalkoxy group, carbonate ester group, nitro group, amino group, carboxyl group, thiol group, ether group, thioether group, phosphine group, phosphone group, urethane group, urea group, amide group, imide group, or phosphoric acid group.)

Inventors:
OMATSU TADASHI (JP)
OKADA YU (JP)
KOGUMA TAKERU (JP)
MATSUMOTO MASAHIRO (JP)
NIIMI YUSHI (JP)
ECHIGO MASATOSHI (JP)
Application Number:
PCT/JP2021/047416
Publication Date:
June 30, 2022
Filing Date:
December 21, 2021
Export Citation:
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Assignee:
MITSUBISHI GAS CHEMICAL CO (JP)
International Classes:
C07C39/373; C07C37/20; C07C41/22; C07C41/26; C07C41/30; C07C43/225; C07C43/23; C07C45/63; C07C49/84; C07C59/70; C07C67/08; C07C69/63; C07C69/712; C07C69/96; C07D309/12; C08F12/02; C08F12/16; C08F212/14; C08F246/00; G03F7/004; G03F7/038; G03F7/039; G03F7/20
Domestic Patent References:
WO2020137935A12020-07-02
Foreign References:
JP2000122291A2000-04-28
JP2019061217A2019-04-18
Attorney, Agent or Firm:
INABA, Yoshiyuki et al. (JP)
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