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Title:
COMPOUND, RESIN, LITHOGRAPHY UNDERLAYER FILM FORMING MATERIAL, LITHOGRAPHY UNDERLAYER FILM FORMING COMPOSITION, LITHOGRAPHY UNDERLAYER FILM, METHOD FOR FORMING RESIST PATTERN, METHOD FOR FORMING CIRCUIT PATTERN, AND METHOD FOR PURIFYING COMPOUND OR RESIN
Document Type and Number:
WIPO Patent Application WO/2016/129679
Kind Code:
A1
Abstract:
A compound represented by formula (1). (In formula (1): R1 represents a C1-30 2n-valent group, and R2 through R5 each independently represent a C1-10 alkyl group, a C6-10 aryl group, a C2-10 alkenyl group, a C1-30 alkoxy group, a thiol group, or a hydroxyl group, at least one R4 and/or at least one R5 representing a C1-30 alkoxy group; m2 and m3 each independently represent an integer of 0 to 8, and m4 and m5 each independently represent an integer of 0 to 9, m4 and m5 not being 0 at the same time; n represents an integer of 1 to 4; and p2 through p5 each independently represent an integer of 0 to 2.)

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Inventors:
TOIDA TAKUMI (JP)
ECHIGO MASATOSHI (JP)
SATO TAKASHI (JP)
MAKINOSHIMA TAKASHI (JP)
Application Number:
PCT/JP2016/054159
Publication Date:
August 18, 2016
Filing Date:
February 12, 2016
Export Citation:
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Assignee:
MITSUBISHI GAS CHEMICAL CO (JP)
International Classes:
C07C43/235; C07C41/38; C07C43/205; C07C43/275; C08G8/00; G03F7/11; G03F7/20; G03F7/26
Domestic Patent References:
WO2013134997A12013-09-19
WO2014024836A12014-02-13
WO2015137486A12015-09-17
WO2015137485A12015-09-17
Foreign References:
JP2007241271A2007-09-20
JPH0519463A1993-01-29
JP2010077038A2010-04-08
CN103804196A2014-05-21
CN104557552A2015-04-29
Other References:
CHEN H. ET AL.: "Biphen[n]arenes", CHEMICAL SCIENCE, vol. 6, 17 September 2014 (2014-09-17), pages 197 - 202, XP055476880
YAMADA A. ET AL.: "Development of High Resolution Molecular Resist Based on Tris((hydroxypheny)pheny)benzene", JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, vol. 23, 2010, pages 91 - 95, XP055477734
See also references of EP 3257835A4
Attorney, Agent or Firm:
INABA, Yoshiyuki et al. (JP)
Yoshiyuki Inaba (JP)
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